N. Mutoh, K. Orihara, Y. Kawakami, T. Nakano, S. Kawai, I. Murakami, A. Tanabe, S. Suwazono, K. Arai, N. Teranishi, M. Furumiya, M. Morimoto, K. Hatano, K. Minami, Y. Hokari
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引用次数: 10
Abstract
The authors propose a new cell structure employing a gate-assisted punchthrough read-out mode, which is suitable for a high packing density interline-transfer CCD (IT-CCD) image sensor. The new cell structure, fabricated through the use of high energy ion implantation technology, enables both deep photodiode formation and transfer-gate/ channel-stop length reduction. The proposed structure has been applied to a 1/4 inch 380 k pixel IT-CCD image sensor with reduced pixel size as small as 4.8 /spl mu/m (H)/spl times/5.6 /spl mu/m (V), which attains a high sensitivity (35 mV/lx) and a large saturation signal (600 mV).<>
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