Super Junction by Implant through Trench Contact for Low-Voltage Power MOSFET and IGBT

Abstract

Power ICs and devices, as key components for high performance systems with Artificial-Intelligence and Internet-of-Things (AI/IoT) (e.g. Data centers, Smart cars and autonomous driving, Robotics, Industry 4.0, etc.), need superior quality and reliability but also super low on-state resistance (Ron) with good breakdown voltage (BV). This paper briefly describe how to achieve super low Ron for low-voltage (20-40v) power MOSFET and IGBT by implanting through trench contact holes to form p-type pillars as well as floating islands.