History Effect on Circuit Performance of SOI-MOSFETs

Abstract

The history effect observed in SOI-MOSFET is investigated. Origin of the effect is the impact ionization, where induced carriers are accumulated within the SOI layer due the potential barrier at the source/channel junction. The compact model HiSIM_SOTB describing the effect based on its origin is studied to analyze the influence on circuit. An inverter-chain circuit is applied to characterize the influence of the history effect. It is demonstrated how the accumulated carriers propagates within the circuit as well as how the generated carriers are accumulated and disappeared during circuit operation. The charging/discharging of the carriers takes time until it reaches stable condition, which could be much longer than the normal circuit operation cycle, observed as the history effect.