The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology

Abstract

This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 /spl mu/m CMOS-based 200/285 GHz (f/sub T//f/sub max/) SiGe HBT technology.