发布求助
文献互助 智能选刊 最新文献

Effectiveness of N/sub 2/O-nitrided Gate Oxide for High Performance Cmosfets

[1991] 49th Annual Device Research Conference Digest Pub Date : 1900-01-01 DOI:10.1109/DRC.1991.664709
T. Hayashi, M. Ohno, A. Uchiyama, H. Fukuda, T. Iwabuchi, S. Ohno
{"title":"Effectiveness of N/sub 2/O-nitrided Gate Oxide for High Performance Cmosfets","authors":"T. Hayashi, M. Ohno, A. Uchiyama, H. Fukuda, T. Iwabuchi, S. Ohno","doi":"10.1109/DRC.1991.664709","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
分享
查看原文 本刊更多论文
N/sub / o氮化栅极氧化物在高性能cmos中的有效性
本文章由计算机程序翻译，如有差异，请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
[1991] 49th Annual Device Research Conference Digest
[1991] 49th Annual Device Research Conference Digest
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信