Viet Nguyen-Thien, Huy-Dung Han, L. Pham-Nguyen, Xuan Thanh Pham, Manh Kha Hoang
{"title":"A 0.47-μW Multi-stage Low Noise Amplifier Employing 0.2-V-supply OTA","authors":"Viet Nguyen-Thien, Huy-Dung Han, L. Pham-Nguyen, Xuan Thanh Pham, Manh Kha Hoang","doi":"10.1109/ICCE55644.2022.9852018","DOIUrl":null,"url":null,"abstract":"This paper presents an ultra-low power low-noise amplifier (LNA) for neural applications. The proposed LNA uses a squeezed-inverter amplifier (SQI), powered by a 0.2 V supply, to address the main noise source at the input stage to achieve high power efficiency. The proposed LNA is designed in a 180-nm CMOS process. The post-simulation results show that the LNA achieves an input-referred noise of 0.9 μVrms over a bandwidth of 1 kHz. The proposed architecture consumes a power of only 0.47 μW, with a noise efficiency factor (NEF) of 1.47 and a power efficient factor (PEF) of 0.55 over a frequency bandwidth of 10 kHz. The closed-loop gain of the LNA is about 40 dB with a bandwidth of 200 Hz to 10 kHz.","PeriodicalId":388547,"journal":{"name":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE55644.2022.9852018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents an ultra-low power low-noise amplifier (LNA) for neural applications. The proposed LNA uses a squeezed-inverter amplifier (SQI), powered by a 0.2 V supply, to address the main noise source at the input stage to achieve high power efficiency. The proposed LNA is designed in a 180-nm CMOS process. The post-simulation results show that the LNA achieves an input-referred noise of 0.9 μVrms over a bandwidth of 1 kHz. The proposed architecture consumes a power of only 0.47 μW, with a noise efficiency factor (NEF) of 1.47 and a power efficient factor (PEF) of 0.55 over a frequency bandwidth of 10 kHz. The closed-loop gain of the LNA is about 40 dB with a bandwidth of 200 Hz to 10 kHz.