A. Sattu, D. Billingsley, J. Deng, J. Yang, R. Gaska, M. Shur, G. Simin
{"title":"Low loss AlInN/GaN Monolithic Microwave Integrated Circuit switch","authors":"A. Sattu, D. Billingsley, J. Deng, J. Yang, R. Gaska, M. Shur, G. Simin","doi":"10.1109/DRC.2011.5994438","DOIUrl":null,"url":null,"abstract":"We report on the first AlInN/GaN Heterojunction Field Effect Transistor (HFET) based Monolithic Microwave Integrated Circuit (MMIC) switch. Lattice-matched AlInN/GaN heterostructures with indium contents of ∼17% exhibit a very large conduction band discontinuity, ΔE<inf>C</inf>, of 1.7 eV. This large discontinuity results in 2DEG densities as high as 4.7×10<sup>13</sup> cm<sup>−2</sup> [1] and electron mobilities as high as 1617 cm<sup>2</sup>/V-s [2]. As a result these heterostructures can achieve record low sheet resistances, making them very attractive candidates for ultra-low loss microwave and other switching devices.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report on the first AlInN/GaN Heterojunction Field Effect Transistor (HFET) based Monolithic Microwave Integrated Circuit (MMIC) switch. Lattice-matched AlInN/GaN heterostructures with indium contents of ∼17% exhibit a very large conduction band discontinuity, ΔEC, of 1.7 eV. This large discontinuity results in 2DEG densities as high as 4.7×1013 cm−2 [1] and electron mobilities as high as 1617 cm2/V-s [2]. As a result these heterostructures can achieve record low sheet resistances, making them very attractive candidates for ultra-low loss microwave and other switching devices.