R.L. Barry, J. Chickanosky, F. Masci, R. Piro, S.E. Oakland, M. Ouellette, D. W. Kemerer, M.R. Noack, W.C. Leipoid
{"title":"A high-performance ROM compiler for 0.50 /spl mu/m and 0.36 /spl mu/m CMOS technologies","authors":"R.L. Barry, J. Chickanosky, F. Masci, R. Piro, S.E. Oakland, M. Ouellette, D. W. Kemerer, M.R. Noack, W.C. Leipoid","doi":"10.1109/ASIC.1995.580751","DOIUrl":null,"url":null,"abstract":"A ROM compiler has been developed for use in IBM's 0.50 /spl mu/m and 0.36 /spl mu/m CMOS ASIC technologies. Late-personalized mask ROMs are generated for sizes from 512 bits to 256 K bits. The 0.50 /spl mu/m technology has a memory cell area of 6.40 /spl mu/m/sup 2/ with a typical access time of 6.0 ns, while the 0.36 /spl mu/m technology reduces memory cell area to 4.64 /spl mu/m/sup 2/ and has a 4.5 ns typical access time. The ROM includes DC and AC self-test.","PeriodicalId":307095,"journal":{"name":"Proceedings of Eighth International Application Specific Integrated Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Eighth International Application Specific Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1995.580751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A ROM compiler has been developed for use in IBM's 0.50 /spl mu/m and 0.36 /spl mu/m CMOS ASIC technologies. Late-personalized mask ROMs are generated for sizes from 512 bits to 256 K bits. The 0.50 /spl mu/m technology has a memory cell area of 6.40 /spl mu/m/sup 2/ with a typical access time of 6.0 ns, while the 0.36 /spl mu/m technology reduces memory cell area to 4.64 /spl mu/m/sup 2/ and has a 4.5 ns typical access time. The ROM includes DC and AC self-test.