Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

Abstract

Gate capacitance versus voltage (C-V) characteristics for double gate MOSFETs with uniaxially strained silicon substrate are presented incorporating wave function penetration effect. Changes in capacitance with stress levels up to 5 GPa are studied. Physical insights of the capacitance value change are also discussed. Contributions of band splitting and effective mass change in C-V due to uniaxial strain are analyzed. Dependencies of C-V change on doping density and body thickness for uniaxial strain are revealed for double gate MOSFETs.