SOS MOSFETs for monolithic microwave ICs

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1982.1156332

S. Yu, J. Eshbach, Ying Hwang, R. Naster

引用次数: 0

Abstract

Large gate-width SOS MESFETs, operated at 3GHz, with output power densities of 175mW/mm,ηdrain = 51% and ηpower-added = 31%, will be described. Device impedances were measured versus power level.

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用于单片微波集成电路的SOS mosfet

将描述工作在3GHz，输出功率密度为175mW/mm，η漏极= 51%，η功率增加= 31%的大栅极宽度SOS mesfet。测量器件阻抗与功率水平的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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