Flash memory: a challenged memory technology

J. van Houdt
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引用次数: 3

Abstract

Flash memory although being an evolutionary rather than revolutionary technology nevertheless revolutionized the entire memory business. While (electrically) erasable and programmable ROMs (EEPROMs and EPROMs) only served a minor application field, the combination of electrical erasability with high density - known today as flash memory - has changed the face of the memory business in an unprecedented way. Although the technology is constantly being challenged by new promising alternatives, there is still quite some momentum remaining for flash scaling provided the technology becomes more application-specific and more hierarchically integrated with other memories on the system level. This paper briefly reviews the basics of NOR and NAND technology as well as its embedded counterparts as being used today, the way they are linked to the application and system levels, as well as some alternative charge-based memories such as nanocrystal and nitride memory
闪存:一种具有挑战性的存储技术
闪存虽然是一种进化而不是革命性的技术,但却彻底改变了整个存储行业。虽然(电)可擦和可编程rom (eeprom和eprom)只服务于一个小的应用领域,但电可擦和高密度的结合-今天称为闪存-以前所未有的方式改变了存储器业务的面貌。尽管该技术不断受到新的有前途的替代方案的挑战,但只要该技术变得更加特定于应用,并在系统层面上与其他存储器进行更分层的集成,那么闪存扩展的势头仍然相当强劲。本文简要回顾了NOR和NAND技术的基础知识,以及目前正在使用的嵌入式技术,它们与应用和系统级别的联系方式,以及一些替代的基于电荷的存储器,如纳米晶体和氮化存储器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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