Development of TUNNETT Diode as Terahertz Device and Its Applications

Abstract

Recently, terahertz (THz) spectroscopy with imaging has attracted attention for application in the fields of medicine, pharmacy, and biology [1]. A compact THz light source by electron device with highly stable of frequency and output power is desired. We have fabricated TUNNETT with continuous-wave fundamental-mode oscillation in the frequency range up to 700 GHz at room-temperature operation. TUNNETT, a transit-time diodes with tunnel injection of electron shown in Figure 1 was invented in 1958 [2]. The first operating device ofTUNNETT was demonstrated by Nishizawa in 1968 [3], and fundamental-mode 100 GHz devices generating 100 mW ofRF power were achieved by Eisele et al [4].