Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part I

Abstract

In the present work, step gate oxide design has been implemented on lateral β – Ga2O3 MOSFET with the objective of improving device performance for high power microwave applications. Device characteristics have been obtained by employing TCAD based numerical simulations. Rigorous analysis has been carried out to obtain optimal lengths of step gate oxides and these optimized lengths have been used to obtain various characteristics. A comparison of various characteristics of the optimized proposed device has been drawn with the conventional device to investigate device performance for high power and microwave applications.