A. El Amrani, M. El Bouhali, M. Bouya, A. Benali, M. Faqir, A. Hadjoudja, M. Ghogho
{"title":"Electrical performance of glass interposer-based 3D packaging: Modeling and simulations","authors":"A. El Amrani, M. El Bouhali, M. Bouya, A. Benali, M. Faqir, A. Hadjoudja, M. Ghogho","doi":"10.1109/EITECH.2015.7162930","DOIUrl":null,"url":null,"abstract":"For cell phone cameras the glass is a promising material as an interposer for 3D microelectronic and multifunctional packaging thanks to its insulation proprieties. Compared to silicon, glass provides better electrical performances. In this work, we present a new electrical modeling approach, based on physical parameters, for the glass interposer with through package vias (TPV). First, we develop a model that takes into consideration the parasitic effects which represent a serious drawback for high frequency applications. The interesting feature of this model is its ability to convert physical weaknesses into electrical characteristics. We simulate the insertion loss induced within the TPV structure and we compare the results with the insertion loss induced within trough silicon vias (TSV). Finally we design a model to simulate the Crosstalk between two neighbor TPVs.","PeriodicalId":405923,"journal":{"name":"2015 International Conference on Electrical and Information Technologies (ICEIT)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical and Information Technologies (ICEIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EITECH.2015.7162930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
For cell phone cameras the glass is a promising material as an interposer for 3D microelectronic and multifunctional packaging thanks to its insulation proprieties. Compared to silicon, glass provides better electrical performances. In this work, we present a new electrical modeling approach, based on physical parameters, for the glass interposer with through package vias (TPV). First, we develop a model that takes into consideration the parasitic effects which represent a serious drawback for high frequency applications. The interesting feature of this model is its ability to convert physical weaknesses into electrical characteristics. We simulate the insertion loss induced within the TPV structure and we compare the results with the insertion loss induced within trough silicon vias (TSV). Finally we design a model to simulate the Crosstalk between two neighbor TPVs.