Advanced flip chip technologies in rf, microwave, and MEMS applications

Abstract

A variety of flip chip technologies are available today which differ in bumping material, substrate type, pad metallization and joining method. They are found in packages as well as on multichip modules and directly flip chip bonded on the board. Components including flip chip like bal grid arrays and chip size packages are introduced. Flip chip is the most favored assembly technology for high frequency applications due to the small parasitic of the short bump interconnect. High performance packages for optoelectronic devices using self-alignment during a fluxless reflow soldering are shown as well as the integration of MMICs. High density multichip modules have been fabricated for large pixel defectors of a nuclear detector with eight Chips and more than 46000 I/Os with an acceptable yield. Flip chip technology is a very flexible assembly method for different applications. Variations of the bump structure can be used for MEMS packaging as well and it was demonstrated by the assembly of a thin membrane to form an absolute pressure sensor with a vacuum enclosure. For different packaging requirements the appropriate technology should be chosen very carefully. An overview will be given for different bumping and flip chip joining methods suitable for high volume production as well as for prototyping. Wafer bumping methods will focus on electro less deposition of nickel/gold as well as on electroplating of gold, SnPb and AuSn solders. For rapid prototyping single chip bumping methods are described. Examples of different joining methods - soldering, adhesive bonding and thermocompression bonding - will be shown.