Bonding based channel transfer and low temperature process for monolithic 3D integration platform development

Abstract

We have studied low temperature processes for monolithic 3D integration platform development including hydrogen/helium ion implantation-based wafer cleavage & bonding (<; 450°C), low temperature (<; 550°C) in-situ doped S/D selective SiGe epi process, low temperature (<; 200°C) gate stack on the chemical-mechanical polished (CMP) wafer, and green-lased annealing. These unit technologies can be adopted to achieve 3D integration platform technology for the high performance and low power applications.