Field emission of uniform carbon cone arrays grown on porous silicon substrate

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414222

Qiang-sheng Wang, Junjie Li, Zongli Wang, C. Shi, Haijun Li, C. Gu

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Abstract

Uniform carbon cones arrays with average height of 1/spl mu/m were grown on porous silicon substrate using the hot filament chemical vapor deposition (HFCVD). Raman spectroscopy was used to characterize as-prepared carbon cones, which are composed of D peak (/spl sim/1352cm/sup -1/), G peak (-1601cm/sup -1/) and a broad peak at /spl sim/1475cm/sup -1/ attributed to hydrogenated carbon (a-C:H). It was found that both the immersion of porous silicon substrate in Fe/sub 2/(SO/sub 4/)/sub 3/ aqueous solution and the applied voltage in the deposition are vital to the growth of the carbon cones. Furthermore, the field emission properties of the as-prepared carbon cone arrays were studied, which shows an excellent field emission property. The threshold field is 2.2 V//spl mu/m, emission current of more than 80 /spl mu/A could be obtained as applied electric field is 3.4 V//spl mu/m. The internal-tip mechanism has been proposed for cone arrays in order to account for the observed field emission.

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多孔硅衬底上均匀碳锥阵列的场发射

采用热丝化学气相沉积(HFCVD)技术在多孔硅衬底上生长平均高度为1/spl mu/m的均匀碳锥阵列。用拉曼光谱对制备的碳锥进行了表征，碳锥由D峰(/spl sim/1352cm/sup -1/)、G峰(-1601cm/sup -1/)和氢化碳(a- c:H)在/spl sim/1475cm/sup -1/处的宽峰组成。结果表明，多孔硅衬底在Fe/sub 2/(SO/sub 4/)/sub 3/水溶液中的浸没和施加的电压对碳锥的生长至关重要。此外，对制备的碳锥阵列的场发射性能进行了研究，表明其具有良好的场发射性能。阈值场为2.2 V//spl mu/m，外加电场为3.4 V//spl mu/m时，可获得80 /spl mu/A以上的发射电流。为了解释观测到的场发射，提出了锥阵列的内尖端机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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