Selenium segregation optimization for 10 nm node contact resistivity

Abstract

Contact resistivity (ρ_C) reduction for n-SD (source/drain) with Se⁺ implant was evaluated for different integration schemes. It is found that Se⁺ implant energy is one of the most critical process parameters for ρ_C improvement, achieved by placing the Se⁺ peak close to silicide (TiSi₂ or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρ_C solution for n-SD for 10 nm node.