S. Nagahara, Arnaud Dauendorffer, A. Thiam, Xiang Liu, Yuhei Kuwahara, C. Dinh, Soichiro Okada, S. Kawakami, H. Genjima, Noriaki Nagamine, M. Muramatsu, S. Shimura, A. Tsuboi, K. Nafus, Y. Feurprier, M. Demand, R. Ramaneti, P. Foubert, D. De Simone, Geert Vendenberghe
{"title":"Recent advances in EUV patterning in preparation towards high-NA EUV","authors":"S. Nagahara, Arnaud Dauendorffer, A. Thiam, Xiang Liu, Yuhei Kuwahara, C. Dinh, Soichiro Okada, S. Kawakami, H. Genjima, Noriaki Nagamine, M. Muramatsu, S. Shimura, A. Tsuboi, K. Nafus, Y. Feurprier, M. Demand, R. Ramaneti, P. Foubert, D. De Simone, Geert Vendenberghe","doi":"10.1117/12.2657432","DOIUrl":null,"url":null,"abstract":"High-NA EUV lithography is currently under development to keep up with device node scaling with smaller feature sizes. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) are discussed. A newly developed resist development method (ESPERT™) was examined on MOR with 24 nm pitch line and space (L/S) patterns and 32 nm pitch pillars for preparation of high-NA EUV patterning. The patterning results showed improved sensitivity and pattern collapse margin. CAR contact hole patterning at 28 nm pitch was also examined by stochastic lithography simulation. The simulation results indicate that resist film thickness needs to be optimized for target pitches.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2657432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High-NA EUV lithography is currently under development to keep up with device node scaling with smaller feature sizes. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) are discussed. A newly developed resist development method (ESPERT™) was examined on MOR with 24 nm pitch line and space (L/S) patterns and 32 nm pitch pillars for preparation of high-NA EUV patterning. The patterning results showed improved sensitivity and pattern collapse margin. CAR contact hole patterning at 28 nm pitch was also examined by stochastic lithography simulation. The simulation results indicate that resist film thickness needs to be optimized for target pitches.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
