A 24V Thin-Film Ultrasonic Driver for Haptic Feedback in Metal-Oxide Thin-Film Technology using Hybrid DLL Locking Architecture

Jonas Pelgrims, K. Myny, W. Dehaene
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Abstract

This paper presents a 24V high voltage (HV) ultrasonic driver for haptic feedback, designed to drive piezo-electric micromachined ultrasonic transducers (PMUT) using a unipolar 0.8um indium-galium-zinc-oxide (IGZO) thin-film transistor technology fabricated on a polymer substrate. A new hybrid DLL architecture is proposed to overcome the IGZO technology's shortcomings and leverage the accuracy and speed capabilities of Silicon technology. The ultrasonic driver is able to drive a transducer capacitance up to 36pF with a 4bit phase resolution and a frequency of 250kHz occupying a pitch matched area per pixel of $800\mu\mathrm{m}\times 800\mu m$. This work presents the first fully integrated high-voltage ultrasonic driver in thin-film technology, further expanding the possible applications for thin-film technologies.
基于混合DLL锁定结构的金属氧化物薄膜触觉反馈24V薄膜超声驱动器
本文提出了一种用于触觉反馈的24V高压超声驱动器,设计用于驱动压电微机械超声换能器(PMUT),该驱动器采用单极0.8um铟镓锌氧化物(IGZO)薄膜晶体管技术制作在聚合物衬底上。提出了一种新的混合DLL架构,以克服IGZO技术的缺点,并利用硅技术的精度和速度能力。超声波驱动器能够驱动高达36pF的换能器电容,相位分辨率为4位,频率为250kHz,每像素的间距匹配面积为800\mu\math {m} × 800\mu m$。这项工作首次在薄膜技术中实现了完全集成的高压超声驱动器,进一步扩展了薄膜技术的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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