Investigation of residual stress effects and modeling of spring constant for RF MEMS switches

H. Ur Rahman, K. Y. Chan, R. Ramer
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引用次数: 8

Abstract

Any film which is deposited during the fabrication undergoes some form of stress. It can be either a compressive stress or tensile stress. It is important to have right value of either compressive or tensile stress for the particular application. In this paper we present an investigation of the stresses generated by the gold thin film during the fabrication process of RF MEMS switches. During the fabrication of RF MEMS series switches a small value of tensile stress is intentionally generated so that beam does not lead to stiction after final release. We are also briefly presenting a new mathematical model for calculation of the spring constant of the beam structures. The method we used is based on the Euler-Bernoulli beam equations. The spring constants calculated for two new beam designs were 3.37N/m and 3.31N/m respectively.
射频MEMS开关残余应力效应研究及弹簧常数建模
在制造过程中沉积的任何薄膜都会受到某种形式的应力。它可以是压应力或拉应力。对于特定的应用,有正确的压应力或拉应力值是很重要的。本文研究了金薄膜在射频MEMS开关制造过程中产生的应力。在RF MEMS系列开关的制造过程中,有意产生一个小的拉应力值,以便梁在最终释放后不会导致粘连。本文还简要介绍了一种新的计算梁结构弹簧常数的数学模型。我们采用的方法是基于欧拉-伯努利梁方程。两种新型梁的弹性常数分别为3.37N/m和3.31N/m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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