Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures

Abstract

In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.