22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2019-06-02 DOI:10.1109/rfic.2019.8701768

S. N. Ong, L. Chan, K. Chew, C.K. Lim, W. L. Oo, A. Bellaouar, C. Zhang, W. Chow, T. Chen, R. Rassel, J. S. Wong, C.W.F. Wan, J. Kim, W.H. Seet, D. Harame

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引用次数: 18

Abstract

This paper addresses the impact of back-gate biasing to DC, RF/millimeter-Wave (mmWave) and high frequency (HF) noise in 22nm FD-SOI technology (GLOBALFOUNDRIES’ 22FDX® technology). The front-gate and the back-gate cut-off frequency fT, together with the maximum oscillation frequency fMAX, were extracted from the four-port S-parameters data. The maximum achieved front-gate/back-gate fT and fMAX for the NFET is 350/85 GHz and 370/23 GHz respectively. In addition, 22FDX® technology demonstrated a tuneable HF noise parameter by using the back-gate biasing to achieve best-in-class low noise level. Two front-end (FE) modules were presented, which exploit the unique feature of back-gate. This unique feature allows superior designs with excellent combination of performance, power consumption and development cost, for emerging applications such as IoT, Telecommunication UE, RF and mmWave circuits with high speed connectivity and networking.

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具有反向偏置能力的22nm FD-SOI技术为实现高效，超低功耗模拟和RF/毫米波设计提供了卓越的性能

本文讨论了22nm FD-SOI技术(GLOBALFOUNDRIES的22FDX®技术)中反向偏置对直流、射频/毫米波(mmWave)和高频(HF)噪声的影响。从四端口s参数数据中提取出前门、后门截止频率fT和最大振荡频率fMAX。最大实现的前门/后门fT和fMAX分别为350/85 GHz和370/23 GHz。此外，22FDX®技术通过使用后门偏置实现了可调谐的高频噪声参数，从而实现了同类最佳的低噪声水平。设计了两个前端(FE)模块，利用了后门的独特特性。这种独特的功能允许卓越的设计与性能，功耗和开发成本的优秀组合，用于新兴应用，如物联网，电信UE, RF和毫米波电路，具有高速连接和网络。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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