High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination

Abstract

A novel multi-zone junction termination extension (MZJTE) is presented for high-voltage 4H-SiC pin junction rectifiers. Unlike the conventional multi-implantation or SiC etching approaches, our new termination technique utilizes multiple masking oxide etching steps to achieve a single-implant MZJTE structure that maintains surface planarity. Numerical device simulations have been performed to examine the process sensitivities, compared to single-zone JTE, and yielded breakdown voltages close to 90% of the ideal parallel-plane breakdown voltage. High voltage (V/sub BR//spl ap/8 kV) rectifiers were fabricated and experimental characteristics have been measured.