Influence of Si Nanowires Parameters and Ag Nanoparticles on Light Trapping in Solar Cells

Abstract

Technology of formation of the silicon nanowires by the Metal-Assisted Chemical Etching (MacEtch) method depending on the deposition time of silver nanoparticles and subsequent etching time are investigated in detail. The light trapping of the structures with Si-NWs base on analysis of reflection spectra in dependence on Si-NWs formation parameters are considered. It was shown that optimal deposition time and etching time for Si nanowire -based solar cell are 60 s and 30 min, respectively. The influence of Ag nanoparticle in the Si-NWs arrays on reflectance coefficient is also investigated. Such low reflection coefficient as R < 1 % was obtained in case of Si-NWs on silicon substrate. The key benefits of Si-NWs based solar cells are discussed followed by optical reflectance.