Reliability analysis of small delay defects in vias located in signal paths

Hector Villacorta, V. Champac, C. Hawkins, J. Segura
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引用次数: 2

Abstract

Vias-open defects are one of the dominant failures in modern nanometer technologies and may pose a reliability issue. In this paper, the reliability electromigration risk posed by undetected small delays due to resistive opens in vias located in signal paths is quantified. The Mean Time to Failure as function of the void size, using a cylinder model for the defective via, is estimated. Both effects, electromigration and self heating, have been considered. Reliability analysis considering redundant vias is also presented.
信号通路上过孔小延迟缺陷的可靠性分析
开孔缺陷是现代纳米技术中主要的失效之一,可能会带来可靠性问题。本文对信号通路上的通孔电阻开孔引起的未检测到的小延迟所带来的可靠性电迁移风险进行了量化。对缺陷通孔采用圆柱模型,估计了平均失效时间与孔洞尺寸的关系。考虑了电迁移和自热两种效应。给出了考虑冗余过孔的可靠性分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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