“CCTO thin film growth on a Cu plated Si wafer by pulse laser deposition at low temperatures”

Abstract

Work on the Pulse Laser Deposition (PLD) equipment is purely for research and development at Samsung Electro-Mechanics when it takes 30 minutes to complete the experiment to grow a dielectric thin film on Cu plated pieces of Si wafer. At SEMCO, low temperatures around 180°C is essential for thin film growth on CCL since CCL melts around 200°C. High dielectric thin film performance is also paramount in terms of reducing costs, eliminating SMT passive components and decreasing CCL thickness. It is why CCTO is being investigated since it has very high dielectric performance without any parasitic ferroelectric hysteresis effect. As a result, our investigation shows it is possible to have a dielectric constant of 128 with a loss tangent of 0.15 at a measuring frequency of 1 MHz. PLD conditions require a temperature of 180°C, O2 pressure of 40mTorr, pulsing frequency of 10Hz, and power density of 18mJ/mm2.