A 500 MHz 16*16 complex multiplier using self-aligned gate heterostructure FET technology

T. Akinwande, R. Mactaggart, K. Betz, D. Grider, T. Nohava, J. Nohava, T. Lange, D. Tetzlaff, D. Arch
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引用次数: 4

Abstract

The authors report a three-stage pipelined 4500-gate 16*16 complex multiplier with a multiply rate of 500 million products per second, producing a complex product which requires four multiplications and two additions every 8 ns at a power dissipation of 4.0 W. The multiplier uses a modified Booth's algorithm to reduce the number of adders in the multiplier net. The basic building block of the adders and registers is a DCFL NOR gate with a special load structure. The heterostructure active layers were grown by molecular beam epitaxy on 3-in semi-insulating LEC (liquid encapsulated Czochralski) GaAs substrates. The output of bits 1 and 5, operating in the self-test mode, is shown. The circuit was found to perform vector rotations correctly at a clock rate of 560 MHz with a power dissipation of 6.2 W and at 520 MHz with a power dissipation of 4 W. The 520-MHz clock at 4 W corresponds to 96 ps/gate and 0.89 mW/gate because the pipelined stages are limited to 20 gate delays. This performance represents a loaded delay with each gate driving an average fan-out of 2.5 and about 1000 mu m of interconnects at close to minimum spacing.<>
采用自对准栅异质结构场效应管技术的500 MHz 16*16复倍增器
作者报告了一种三级流水线的4500栅极16*16复乘法器,其乘法速率为每秒5亿次,每8 ns需要4次乘法和2次加法,功耗为4.0 W。该乘法器使用改进的布斯算法来减少乘法器网络中的加法器数量。加法器和寄存器的基本构件是具有特殊负载结构的DCFL NOR门。采用分子束外延的方法,在3英寸半绝缘的液态封装(LEC) GaAs衬底上生长出异质结构活性层。在自检模式下工作的1位和5位的输出如下所示。该电路在560mhz的时钟频率下,功耗为6.2 W,在520 MHz的时钟频率下,功耗为4w,可以正确地执行矢量旋转。4w的520 mhz时钟对应于96 ps/栅极和0.89 mW/栅极,因为流水线级被限制为20个栅极延迟。这种性能代表了负载延迟,每个栅极驱动平均2.5的扇出,并且在接近最小间距的情况下,大约有1000 μ m的互连
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