Switching characteristics of MgO based self-compliant ReRAM devices

Abstract

We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.