Capacitance-Voltage characterization of InAsySb1−y XOI FET

Abstract

Self consistent quasi-static capacitance-voltage (CV) characteristics of InAsSb XOI nFET are investigated. Well known SILVACO's ATLAS device simulation package is used to solve one dimensional coupled Schrödinger-Poisson equation by correlating Fermi function and carrier concentration with growth co-ordinates. It is found that device operating temperature and different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness have strong influence on CV profiles and threshold voltage. It is also reported that there is a limit of doping concentration and channel thickness to ensure enhancement mode operation.