Proton implantation in lateral IGBTs

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274072

T. Chow, D. Pattanayak, A. Mogro-Campero, B. Baliga, M. Adler

引用次数: 4

Abstract

The effect of proton implantation on the performance of n- and p-channel, 500-V lateral insulated gate bipolar transistors (LIGBTs) are studied. It is shown that proton implantation results in a better forward drop vs. turn-off time than conventional electron irradiation. Since proton damage is also more thermally stable than electron damage, proton implantation is a better choice in LIGBT optimization for minimum power loss.<>

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侧位igbt的质子植入

研究了质子注入对n沟道和p沟道500伏横向绝缘栅双极晶体管性能的影响。结果表明，质子注入比常规电子辐照有更好的前向下降和关断时间。由于质子损伤比电子损伤具有更强的热稳定性，因此质子注入是实现最小功率损失的最佳选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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