Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory

Abstract

FeRAM is a promising candidate for next generation embedded DRAM and has attracted significant attention with the advancements in hafnia-based ferroelectric research. In this work, we will review record specifications achieved for implementing FeRAM as an embedded memory such as 2 nanoseconds switching speed, >1012 read/write endurance cycles, low operation voltage, long retention, and operation under worst case anti-ferroelectric (AFE) capacitors process variations at elevated temperature of 85°C. Array-level circuit simulation based on the advanced technology node also indicates that FeRAM can be used as a high-density embedded memory. Finally, functional 3D stacked AFE capacitors with matched performance to conventional trench AFE capacitors are demonstrated for the first time paving the path toward ultrahigh density embedded FeRAM.