Top-gated Carbon Nanotube Field Effect Transistor with Dielectric Formed by Aluminium Natural Oxidation Process

Abstract

The gate dielectric is the key component for the high performance of the carbon nanotube field effect transistor. In this study, we fabricated the top-gated carbon nanotube field effect transistor utilizing oxidized aluminium film as dielectric layer. The less hysteresis and small gate leakage of the device indicate the lower interface trap charges and high quality of the dielectric film.