Prediction of optimum large-signal microwave MESFET efficiency in multiplication and power amplification

Abstract

A method is described which enables the optimum large-signal efficiency to be obtained for a microwave active device independently of the required nonlinear function. The technique consists of determining the volume surrounded by a surface called the "characteristic surface" including all the allowed powers at the terminal ports of the nonlinear component in order to deduce its optimum "intrinsic" powers and then its corresponding optimum efficiency. Applied to MESFETs, the design of both a frequency multiplier and a power amplifier permits one to validate this method.