Modeling minority charge partitioning factor in SiGe HBTs using full regional approach

Abstract

This paper shows that the minority charge partitioning effect in silicon germanium heterojunction bipolar transistors exists even in the low-frequency quasi-static regime. The charge partitioning factor is extracted using the new equivalent circuit model from numerically simulated data for a one-dimensional transistor structure. A comprehensive bias-dependent model is developed using full regional approach coupled with the transient integral charge control theory. The model predicts the bias-dependent low-frequency y21-parameters with excellent accuracy.