Carbon nanotube/solder hybrid structure for interconnect applications

D. Jiang, Shuangxi Sun, W. Mu, Yifeng Fu, Johan Liu
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Abstract

A carbon nanotube (CNT)/Solder hybrid bump structure is proposed in this work in order to overcome the drawbacks of high CNT resistivity while retaining the advantages of CNTs in terms of interconnect reliability. Lithographically defined hollow CNT moulds are grown by thermal chemical vapor deposition (TCVD). The space inside the CNT moulds is filled up with Sn-Au-Cu (SAC) solder spheres of around 10 μm in diameter. This CNT/Solder hybrid material is then reflowed and transferred onto target indium coated substrate. The reflow melts the small solder spheres into large single solder balls thus forming a hybrid interconnect bump together with the surrounding densified CNT walls, which the CNT and the solder serve as resistors in parallel. The electrical resistance of such a CNT/Solder structure is measured to be around 6 folds lower than pure CNT bumps.
用于互连应用的碳纳米管/焊料混合结构
为了克服碳纳米管(CNT)电阻率高的缺点,同时保留碳纳米管在互连可靠性方面的优势,本工作提出了一种碳纳米管/焊料混合凹凸结构。光刻定义的空心碳纳米管模具是通过热化学气相沉积(TCVD)生长的。碳纳米管模具内部的空间填充了直径约10 μm的Sn-Au-Cu (SAC)焊料球。然后将这种碳纳米管/焊料混合材料回流并转移到目标铟涂层基板上。回流将小的焊料球熔化成大的单个焊料球,从而与周围致密的碳纳米管壁形成混合互连凸点,碳纳米管和焊料作为并联电阻。这种碳纳米管/焊料结构的电阻被测量为比纯碳纳米管凸起低6倍左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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