High switching speed 1500 V IGBT for CRT deflection circuit

Abstract

A novel 1500 V IGBT (insulated gate bipolar transistor) was developed for the CRT horizontal deflection circuit. The authors clarify the device characteristics needed for the horizontal deflection circuit and demonstrate the 1500 V IGBT specially designed for this application. In order to make it possible to operate in the high frequency region, the device design and process conditions in the IBGT, i.e., the surface MOS-gate structure, the n/sup +/ buffer layer structure, and the lifetime killer control, were optimized. It was confirmed that this 1500 V IGBT was driven and operated up to a 70 kHz deflection frequency.<>