Quasistatic large signal model of transistors

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827815

E. A. Korchagin

引用次数: 0

Abstract

The approach to the build-up of quasistatic large signal model of two-ports is offered. In this approach small single-tone signal with constant bias is used. A quasistatic large signal model of transistor is proposed.

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晶体管的准静态大信号模型

给出了建立双端口准静态大信号模型的方法。这种方法使用恒定偏置的小单音信号。提出了晶体管准静态大信号模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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