Single polysilicon layer advanced super high-speed BiCMOS technology

Abstract

A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed.<>