1/f hopping noise in molybdenum disulphide

Abstract

Molybdenum disulphide (MoS2), a layered metal dichalcogenide material, has attracted significant attention recently for potential application in next-generation electronics, light detection and emission, and chemical sensing due to its unique electrical and optical properties. The intrinsic 2-dimensional nature of carriers in MoS2 offers superior vertical scaling for device structure, leading to potentially low-cost, flexible, and transparent 2D electronic devices. However, the nature of charge transport still remains elusive, esp., a much lower mobility than theoretical limit set by phonon scattering. In this study, we focus on the study of low frequency noise (i.e., 1/f noise) of MoS2 devices working in the hopping regime since 1/f noise limits the performance of devices. There has been scarce 1/f noise study on monolayer or few-layer MoS2 based semiconductor devices. To the best of our knowledge, this is the first report focusing on 1/f hopping noise in MoS2. In this work, the low frequency noise of high mobility single crystal MoS2 is investigated by using transmission line measurements (TLM). At room temperature, the Hooge's parameter is ranged between 1.44×10-3 and 3.51×10-2, and it shows an inverse relationship with the field mobility. At low temperatures, the 1/f noise performance reveals the hopping is nearest neighbor hopping.