Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2016-09-01 DOI:10.1109/ICEEE.2016.7751218

S. Vazquez, A. Olivares, I. Cosme, S. Mansurova, A. Kosarev, A. Itzmoyotl

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引用次数: 1

Abstract

Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O2 = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175° C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were characterized by four-point probe method and transmittance measurements. It was found that reducing oxygen concentration the sheet resistance decreases. For samples fabricated in oxygen atmosphere the transmittance reached values above 90 %. However, the sample with post-deposition thermal treatment at T = 300 °C in oxygen atmosphere shows the best transmittance (95 %) and lowest value of sheet resistance (Rs= 27 ohms-square). Finally, the transparent conducting oxides were applied in hybrid organic-inorganic photovoltaic structures. The best power conversion efficiency in AM-1 sunlight η = 2.13 % was obtained for a structure with ITO fabricated at oxygen concentration %O2 = 0.25 % in comparison with an efficiency η = 1.87 % obtained for a structure fabricated with commercial ITO.

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氧环境下溅射制备氧化铟锡薄膜的光电性能研究

采用磁控溅射法制备了不同氧流量(%O2 = 1% ~ 0%)下的氧化铟锡(ITO)薄膜。采用射频放电技术，在衬底温度T = 175℃，压力P = 6 mTorrs的氩气/氧气气氛中，射频功率W = 150 W沉积薄膜。利用四点探针法和透射率测量对制备的ITO薄膜的光电参数进行了表征。结果表明，随着氧浓度的降低，膜阻减小。在氧气气氛中制备的样品透光率达到90%以上。然而，在氧气气氛中T = 300℃进行沉积后热处理的样品具有最佳的透射率(95%)和最低的片电阻值(Rs= 27欧姆平方)。最后，将透明导电氧化物应用于有机-无机杂化光伏结构。当氧浓度为%O2 = 0.25%时，ITO结构在AM-1阳光下的最佳功率转换效率η = 2.13%，而用商业ITO结构的效率η = 1.87%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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