Thick ScAlN film for high efficient ultrasonic transducer in low frequency of 81 MHz

K. Sano, R. Karasawa, T. Yanagitani
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引用次数: 0

Abstract

Large piezoelectricity in 43% Sc doped ScAlN thin film has been recently reported. The thickness extensional mode resonant frequency, where ultrasonic generation efficiency become large, is inversely proportional to the thickness of films. Bulk ScAlN thick plates are attractive for the low frequency and high power ultrasonic applications such as actuators and medical ultrasonics because ScAlN possess lower mechanical and dielectric losses compared with well-used PZT. The thick ScAlN films, however, has not been reported. The electromechanical coupling coefficient kt2 was determined to be 19% using the thickness extensional mode at 81 MHz. This frequency is extremely low compared to well-reported ScAlN thin films in the GHz ranges.
用于81兆赫低频高效超声换能器的厚ScAlN薄膜
最近报道了43% Sc掺杂ScAlN薄膜的大压电性。超声产生效率变大的厚度外延模谐振频率与薄膜厚度成反比。由于与常用的PZT相比,ScAlN厚板具有更低的机械和介电损耗,因此对于低频和高功率超声应用(如执行器和医用超声)具有吸引力。然而,厚的ScAlN膜尚未被报道。在81 MHz下,采用厚度扩展模式确定机电耦合系数kt2为19%。与广泛报道的GHz范围的ScAlN薄膜相比,这个频率非常低。
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