A Tunable FET Amplifier in Integrating Waveguide Technology

1986 16th European Microwave Conference Pub Date : 1986-10-01 DOI:10.1109/EUMA.1986.334280

U. Meier, J. Hinken

引用次数: 1

Abstract

A novel low loss guiding structure (INWATE) is applied to the design of GaAs FET waveguide amplifiers. Experimental results of a single stage amplifier show a gain characteristic of 6.7 ± 0.15 dB within a relative bandwidth of 2.4 % at a midband frequency of 10.15 GHz with an associated minimum noise figure of 3.6 dB (MGF 1302 : MAG = 9.8 dB, FMIN = 2.3 dB).

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集成波导技术中的可调谐场效应管放大器

将一种新型的低损耗波导结构(inwater)应用于砷化镓场效应管波导放大器的设计。实验结果表明，在10.15 GHz中频下，单级放大器在相对带宽为2.4%范围内的增益特性为6.7±0.15 dB，最小噪声系数为3.6 dB (MGF 1302: MAG = 9.8 dB, FMIN = 2.3 dB)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1986 16th European Microwave Conference

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