{"title":"Silicon interposer platform with low-loss through-silicon vias using air","authors":"Hanju Oh, G. May, M. Bakir","doi":"10.1109/3DIC.2015.7334621","DOIUrl":null,"url":null,"abstract":"A silicon interposer platform featuring low-loss through-silicon vias (TSVs) using air is proposed and demonstrated. The proposed low-loss TSVs are fabricated by partially etching silicon between the signal and ground TSVs. High-frequency characterization in the 10 MHz-to-20 GHz frequency range demonstrates that the proposed TSVs reduce capacitance by 63.2% at 20 GHz compared to conventional TSVs.","PeriodicalId":253726,"journal":{"name":"2015 International 3D Systems Integration Conference (3DIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3DIC.2015.7334621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A silicon interposer platform featuring low-loss through-silicon vias (TSVs) using air is proposed and demonstrated. The proposed low-loss TSVs are fabricated by partially etching silicon between the signal and ground TSVs. High-frequency characterization in the 10 MHz-to-20 GHz frequency range demonstrates that the proposed TSVs reduce capacitance by 63.2% at 20 GHz compared to conventional TSVs.