Silicon interposer platform with low-loss through-silicon vias using air

Hanju Oh, G. May, M. Bakir
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引用次数: 4

Abstract

A silicon interposer platform featuring low-loss through-silicon vias (TSVs) using air is proposed and demonstrated. The proposed low-loss TSVs are fabricated by partially etching silicon between the signal and ground TSVs. High-frequency characterization in the 10 MHz-to-20 GHz frequency range demonstrates that the proposed TSVs reduce capacitance by 63.2% at 20 GHz compared to conventional TSVs.
使用空气的低损耗硅通孔硅中间平台
提出并演示了一种采用空气的低损耗硅通孔(tsv)硅中间体平台。所提出的低损耗tsv是通过在信号和接地tsv之间部分蚀刻硅来制造的。在10 mhz至20 GHz频率范围内的高频特性表明,与传统tsv相比,所提出的tsv在20 GHz时的电容降低了63.2%。
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