Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499923

V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouvé, C. Le Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, D. Scevola, T. Morel, D. Rébiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard

引用次数: 7

Abstract

Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.

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采用改进的杂化材料，采用传统的BEOL工艺和后期去气孔工艺，实现了45 nm及以下节点的Cu/ULK (k=2.0)集成

传统的Cu-ULK集成方案导致介电常数急剧增加，由于多孔材料的降解在工艺步骤。为了克服这一问题，本文研究了一种积分后去孔方法。提出了材料优化(k=2.0)，允许使用传统的BEOL集成工艺，如氧基蚀刻化学，金属CVD势垒沉积和标准CMP工艺来致密低k。得到的集成k值低于2.2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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