A Novel Program and Read Architecture for Contact-Less Virtual Ground NOR Flash Memory for High Density Application

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705337

N. Ito, Y. Yamauchi, N. Ueda, K. Yamamoto, Y. Sugita, T. Mineyama, A. Ishihama, K. Moritani

引用次数: 5

Abstract

We have successfully developed multilevel (MLC) contact-less virtual ground array (VGA-NOR) flash memory. Sequential program from the source side edge cell of each segment and 32cells unit program with data buffer enable to cancel the Vt interference. Sense amplifier (SA) assist equalize-sensing (SAES) is implemented for high accuracy sensing operation

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一种新型高密度非接触式虚拟地NOR闪存的程序和读取结构

我们成功开发了多电平(MLC)非接触式虚拟地阵列(VGA-NOR)闪存。从源侧的每一段边缘单元和32单元单元的顺序程序，带数据缓冲区，使Vt干扰能够消除。传感放大器(SA)辅助均衡传感(SAES)实现了高精度的传感操作

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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