A 16Mb MRAM with FORK Wiring Scheme and Burst Modes

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696080

Y. Iwata, K. Tsuchida, T. Inaba, Yui Shimizu, R. Takizawa, Y. Ueda, T. Sugibayashi, Y. Asao, T. Kajiyama, K. Hosotani, S. Ikegawa, T. Kai, M. Nakayama, S. Tahara, H. Yoda

引用次数: 17

Abstract

A 16Mb MRAM based on 0.13mum CMOS and 0.24mum MRAM process achieves a 34ns asynchronous access and 100MHz synchronous operation, compatible with pseudo-SRAM for mobile applications. By implementation of FORK wiring scheme, the cell efficiency is raised to 39.9% and the disturb robustness of half-selection state is improved

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一个16Mb的MRAM，带有分叉布线方案和突发模式

基于0.13 μ m CMOS和0.24 μ m MRAM工艺的16Mb MRAM实现了34ns异步访问和100MHz同步操作，与移动应用的伪sram兼容。采用FORK布线方案，将小区效率提高到39.9%，提高了半选择状态的干扰鲁棒性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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