Contrasting topologies for regular interconnection networks under the constraints of nanoscale silicon technology

D. Ludovici, G. Gaydadjiev, Francisco Gilabert Villamón, M. E. Gómez, D. Bertozzi
{"title":"Contrasting topologies for regular interconnection networks under the constraints of nanoscale silicon technology","authors":"D. Ludovici, G. Gaydadjiev, Francisco Gilabert Villamón, M. E. Gómez, D. Bertozzi","doi":"10.1145/1921249.1921259","DOIUrl":null,"url":null,"abstract":"Nowadays, system designers have adopted Networks-on-Chip as communication infrastructure of general-purpose tile-based Multi-Processor System-on-Chip (MPSoC). Such decision implies that a certain topology has to be selected to efficiently interconnect many cores on the chip. To ease such a choice, the networking literature offers a plethora of works about topology analysis and characterization for the off-chip domain. However, theoretical parameters and many intuitive assumptions of such off-chip networks do not necessarily hold when a topology is laid out on a 2D silicon surface. This is due to the distinctive features of silicon technology design pitfalls. This work is a first milestone to bridge this gap, in fact, we propose a comprehensive analysis framework to assess k-ary n-mesh and C-mesh topologies at different level of abstractions, from system to layout level, while capturing implications of system and layout parameters across design hierarchy. When a certain topology proves to be slow due to long links crossing the chip, pipeline stages have been inserted to cope with such slow-down. Furthermore, costs of such speed-up technique have been evaluated to draw a comprehensive performance/area figure.","PeriodicalId":344147,"journal":{"name":"Network on Chip Architectures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Network on Chip Architectures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1921249.1921259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Nowadays, system designers have adopted Networks-on-Chip as communication infrastructure of general-purpose tile-based Multi-Processor System-on-Chip (MPSoC). Such decision implies that a certain topology has to be selected to efficiently interconnect many cores on the chip. To ease such a choice, the networking literature offers a plethora of works about topology analysis and characterization for the off-chip domain. However, theoretical parameters and many intuitive assumptions of such off-chip networks do not necessarily hold when a topology is laid out on a 2D silicon surface. This is due to the distinctive features of silicon technology design pitfalls. This work is a first milestone to bridge this gap, in fact, we propose a comprehensive analysis framework to assess k-ary n-mesh and C-mesh topologies at different level of abstractions, from system to layout level, while capturing implications of system and layout parameters across design hierarchy. When a certain topology proves to be slow due to long links crossing the chip, pipeline stages have been inserted to cope with such slow-down. Furthermore, costs of such speed-up technique have been evaluated to draw a comprehensive performance/area figure.
纳米级硅技术约束下规则互连网络的拓扑对比
目前,系统设计者已经采用片上网络作为通用多处理器片上系统(MPSoC)的通信基础设施。这样的决定意味着必须选择一定的拓扑结构来有效地互连芯片上的许多核心。为了简化这样的选择,网络文献提供了大量关于片外域的拓扑分析和表征的作品。然而,当拓扑布局在二维硅表面上时,这种片外网络的理论参数和许多直观假设不一定成立。这是由于硅技术特点鲜明的设计陷阱。这项工作是弥合这一差距的第一个里程碑,事实上,我们提出了一个全面的分析框架,以评估k-ary n-mesh和C-mesh拓扑在不同的抽象级别,从系统到布局级别,同时捕获跨设计层次的系统和布局参数的含义。当由于长链路穿过芯片而导致某种拓扑结构变慢时,就会插入管道级来应对这种慢速。此外,还对这种加速技术的成本进行了评估,以得出一个综合的性能/面积图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信