Analytical solutions for breakdown voltage and electrical characteristics of STI DEMOS transistors

Abstract

A CMOS compatible high-voltage STI DEMOS transistor is fabricated and its electrical characteristics studied. A method is used to find the breakdown voltage of this two-dimensional STI DEMOS structure theoretically. A breakdown voltage model, which relates the breakdown voltage to the effective N well doping concentration NB and the width of the accumulation region χa, is derived. The predictions of this model agree very well with both the experimental data and with the TCAD simulations.