Design of low noise amplifier using common gate current reused topology for wind profiling radar

B. Venkatesh Murthy, I. S. Rao
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引用次数: 2

Abstract

This paper presents single stage design of low noise amplifier(LNA) common gate(CG) current reused topology using pseudomorphic high electron mobility transistors(pHEMT) for wind profiling radar application at 1.3 GHz. Though CG current reused topology is not sufficient for achieving the desired parameter of LNA such as noise figure, input and output return losses and stability, so source degenerated inductor topology is also used along with the current used topology for achieving desired parameter. Low loss and low cost RT/ duroid RO4003C substrate is used. The single stage LNA results show that overall gain (S21) of 22.149 dB and a noise figure of 0.364 dB. Input and output return losses are less than -10 dB and total power consumption is 180 mW. To perform the linearity, input intercept point (IIP3) and output intercept point (OIP3) is simulated as 31.01 dBm, 47.95 dBm respectively.
风廓线雷达用共栅极电流复用拓扑低噪声放大器设计
提出了一种基于伪晶高电子迁移率晶体管(pHEMT)的低噪声放大器(LNA)共门(CG)电流复用拓扑的单级设计,用于1.3 GHz风廓线雷达。虽然CG电流复用拓扑不足以实现LNA所需的噪声系数、输入输出回波损耗和稳定性等参数,所以在使用电流复用拓扑的同时,还使用源退化电感拓扑来实现所需参数。采用低损耗、低成本的RT/ duoid RO4003C基板。单级LNA结果表明,总增益(S21)为22.149 dB,噪声系数为0.364 dB。输入输出回波损耗小于- 10db,总功耗180mw。为了实现线性,输入截距点(IIP3)和输出截距点(OIP3)分别模拟为31.01 dBm和47.95 dBm。
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